Date of Defense
2-6-2025 11:00 AM
Location
F3, 022
Document Type
Thesis Defense
Degree Name
Master of Science in Physics
College
College of Science
Department
Physics
First Advisor
Prof. Noureddine Amrane
Keywords
antimonene monolayer, doping, optical properties, electronic properties.
Abstract
Two-dimensional materials have undergone a rapid development toward many applications since the discovery of graphene. Then, 2D binary compounds such as transition-metal chalcogenides emerged as complementary materials for graphene due to their sizable bandgap and moderate electrical properties. Silicene, hexagonal boron nitride, molybdenum disulfide, phosphorene and germanene et al have received increasing attention owing to their unique properties and promising applications. Recently, research interests have turned to monoelemental 2D materials. A new ultrathin 2D semiconductor material in group-V, namely, antimonene (Sb). Since its discovery in 2015, antimonene, as an emerging 2D material, has rapidly gained popularity due to its unique optical and electronic properties. Antimonene has some very interesting electronic and optical properties when compared with graphene and 2D transition metal dichalcogenides (TMDCs). Graphene uses have been limited as it does not have a band gap. By contrast, band gaps for TMDCs range between 1.5 and 2.5eV, making them too large for certain optoelectronic applications. However, the predicted electronic properties of antimonene are around 1.2eV, making them ideal for optoelectronics. The only monolayer material with similar electronic properties is phosphorene, but phosphorene is derived from black phosphorus, which is highly hygroscopic and reactive. Antimonene, however, is very stable and can be immersed in water. Antimonene has been noticed, owing to its high stability and some other outstanding properties such as high carrier mobility, excellent thermal conductivity, strain-induced band transition, and broadband absorption. Although monolayer antimonene is a semiconductor with a large indirect band gap of 2.28 eV, the band gap can theoretically decrease to zero with the increase of the number of layers, thus expanding its available absorption band for the mid-infrared spectral region.In this research, extensive theoretical efforts will be made to deal with these challenges and problems, so as to design antimonene-based materials with high thermoelectric performance.
Included in
SIMULATION AND MOLECULAR DESIGN OF ANTIMONENE-BASED MATERIALS WITH HIGH OPTOELECTRONIC PERFORMANCE.
F3, 022
Two-dimensional materials have undergone a rapid development toward many applications since the discovery of graphene. Then, 2D binary compounds such as transition-metal chalcogenides emerged as complementary materials for graphene due to their sizable bandgap and moderate electrical properties. Silicene, hexagonal boron nitride, molybdenum disulfide, phosphorene and germanene et al have received increasing attention owing to their unique properties and promising applications. Recently, research interests have turned to monoelemental 2D materials. A new ultrathin 2D semiconductor material in group-V, namely, antimonene (Sb). Since its discovery in 2015, antimonene, as an emerging 2D material, has rapidly gained popularity due to its unique optical and electronic properties. Antimonene has some very interesting electronic and optical properties when compared with graphene and 2D transition metal dichalcogenides (TMDCs). Graphene uses have been limited as it does not have a band gap. By contrast, band gaps for TMDCs range between 1.5 and 2.5eV, making them too large for certain optoelectronic applications. However, the predicted electronic properties of antimonene are around 1.2eV, making them ideal for optoelectronics. The only monolayer material with similar electronic properties is phosphorene, but phosphorene is derived from black phosphorus, which is highly hygroscopic and reactive. Antimonene, however, is very stable and can be immersed in water. Antimonene has been noticed, owing to its high stability and some other outstanding properties such as high carrier mobility, excellent thermal conductivity, strain-induced band transition, and broadband absorption. Although monolayer antimonene is a semiconductor with a large indirect band gap of 2.28 eV, the band gap can theoretically decrease to zero with the increase of the number of layers, thus expanding its available absorption band for the mid-infrared spectral region.In this research, extensive theoretical efforts will be made to deal with these challenges and problems, so as to design antimonene-based materials with high thermoelectric performance.