Modeling at the nanometric scale of interfacial defects of a semiconductor heterostructure in the isotropic and anisotropic cases for the study of the influence of stresses

Authors

Ahmed BOUSSAHA, University of Batna2, AlgeriaFollow
Rafik MAKHLOUFI, University of Batna2, AlgeriaFollow
Rachid BENBOUTA, Mechanical Engineering Department, Faculty of Technology, University of Batna2, AlgeriaFollow
Mourad BRIOUA, University of Batna2, AlgeriaFollow

Abstract

This work aims to determine the effect of stresses caused by dislocation networks placed at the interface of a semiconductor heterostructure of the thin GaAs/Si system. In this case, we use a mathematical modeling by Fourier series expansion to numerically simulate the stresses for the two cases of isotropic and anisotropic elasticity in order to predict the mechanical behavior of the heterostructure in the presence of interfacial dislocations while respecting well-defined stress boundary conditions. The elastic stress relaxation is reached for a layer thickness threshold of the GaAs deposit on the Si substrate not exceeding 5 nm.

Recommended Citation

BOUSSAHA, Ahmed; MAKHLOUFI, Rafik; BENBOUTA, Rachid; and BRIOUA, Mourad (2024) "Modeling at the nanometric scale of interfacial defects of a semiconductor heterostructure in the isotropic and anisotropic cases for the study of the influence of stresses," Emirates Journal for Engineering Research: Vol. 29: Iss. 1, Article 2.
Available at: https://scholarworks.uaeu.ac.ae/ejer/vol29/iss1/2